data sheet 1 1999-04-01 the ksy 16 is an ion-implanted hall sensor in a monocrystalline gaas-material, built into an smt package (mw-6). it is outstanding for a high magnetic sensitivity and low temperature coefficients. the 0.35 0.35 mm 2 chip is mounted onto a non-magnetic leadframe. the active area is placed approx. 0.45 mm below the surface of the package. type marking ordering code ksy 16 s16 q62705-k338 hall sensor ksy 16 version 2.0 dimensions in mm 0.3 -0.05 +0.1 +0.1 -0.05 0.6 64 1 b a 0.25 m b 0.08 ... 0.15 1.1 max 2? ... 30? 2.6 max 10? max 10? max 0.1 max a m 0.20 2.9 0.1 1.3 0.1 23 5 1.9 gpw06957 0.2 0.15 0.35 0.3 0.1 1.2 3 0.8 0.3 0.5 0.45 0.9 reflow soldering approx. weight 0.02 g pin configuration 1, 4 hall voltage terminals 3+, 2/5- supply current terminals features ? hall sensor on cu-leadframe for smt-technology, mw-6 package ? high sensitivity ? high temperature range ? small linearity error ? low offset voltage ? low tc of sensitivity resistances ? this hall sensor combines the avantages of non- magnetic leadframe and smt capability typical applications ? rotation and position sensing ? current and power measurement ? magnetic field measurement ? control of brushless dc motors
data sheet 2 1999-04-01 ksy 16 absolute maximum ratings electrical characteristics ( t a = 25 c) connection of a hall sensor with a power source since the voltage on the component must not exceed 10 v, the connection to the constant current supply should only be done via a short circuit by-pass. the by-pass circuit-breaker shall not be opened before turning on the power source. this is to avoid damage to the hall sensor due to power peaks. parameter symbol limit values unit operating temperature t a C 40 ? + 150 c storage temperature t stg C 50 ? + 160 c supply current i 1 7ma thermal conductivity 1) g thc 3 2.2 mw/k nominal supply current i 1n 5ma open-circuit sensitivity k b0 190 ? 260 v/at open-circuit hall voltage i = i 1n , b = 0.1 t v 20 95 ? 130 mv ohmic offset voltage i = i 1n , b = 0 t v r20 20 mv linearity of hall voltage b = 0 ? 0.5 t b = 0 ? 1 t f l f l 0.2 0.7 % % input resistance b = 0 t r 10 900 ? 1200 w output resistance b = 0 t r 20 900 ? 1200 w temperature coefficient of the open-circuit hall voltage i 1 = i 1n , b = 0.1 t tc v20 ~ C 0.03 ? C 0.07 %/k temperature coefficient of the internal resistance b = 0 t tc r10, r20 ~ 0.1 ? 0.18 %/k change of offset voltage within the temperature range 2) ?d v r0 ? 2mv 1) thermal conductivity chip-ambient when mounted on alumina ceramic 15 mm 17 mm 0.7 mm 2) aql: 0.65
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